| Title |
Influence of Ion Beam Etching on Silicon Schottky Barriers |
| Authors |
Wang, Jin-Suk(Wang, Jin-Suk) |
| Abstract |
Ion beam etching of silicon with N2 and Ar gas has been found to cause the band edge to bend downward near the surface in p-type silicon. Rectifying, rather than ohmic contacts are obtained on the structures formed by evaporation of gold and titanium onto ion-bean-etched p-type silicon. The 1/C2 versus V relationship measured at 1MHz is found to be nonlinear for small voltages indicating alteration of the effective doping colse to the silicon surface. |