| Title |
A Study On the Effects of Velocity Staur Velocity Saturation on the Mosfet Devices |
| Authors |
Park, Young-June(Park, Young-June) |
| Abstract |
It has been observed that the reduction rate of the inversion layer carrier mobility due to the increase of the longitudinal electric field(drain to source direction) decreases as the transverse electric field increases. The effects of this physicar phenomenon to the I-V characteristics of the short channel NMOSFET are studied. It is shown that these effects increase the drain Current in the saturatio region, which agrees with the genarally observed decrepancy between the experimental I-V charateristics and the I-V modeling which dose not include this physical phenomenon. Also it is shown that this effect becomes more important when the device channel length decreases and the device operates in the high electric field range. |