| Title |
Submicron Pattern Delineation with the Obliquely Deposited Inorganic a-Se75Ge25 photoresist. |
| Authors |
정홍배(Chung, Hong-Bay) ; 이영종(Lee, Young-Jong) ; 류희관(Ryu, Hee-Kwan) ; 허휘(Huh, Hyee) |
| Abstract |
In this study, we investigate the etching characteristics of a-Se75 Ge25 thin films. Etching properties are revealed as a function of obliqueness, temperature and concentraction of the etching solution. As the increase of obliqueness, selective etching effect increase rapidly by 35% at 80 obliqueness, and the etching rate increase the elevated temperature of the solution. The change of etching rate with obliqueness are related closely to the optical change due to the band gap illumination. We obtained clear pattern of 1.5um linewidth. |