| Title |
The Optical Characteristics of {Te}_{100-x}{Ge}_{x} Thin Film with Phase Change |
| Keywords |
상변화 ; 결정화 ; 기록 ; 소거 ; 비정질 Phase Change ; Crystallization ; Recording ; Erasing ; Amorphous |
| Abstract |
In this paper, we investigated the stability of TeS1100-xTGeS1xT( x = 15,33,50 at. %) thin films by observing the transmittance and reflectance changes with annealing and exposure of diode laser(780nm). As results of transmittance changes in constant tenperature and humidity atmosphere, it was shown that TeS150TGeS150T thin film has the smallest transmittance change. From the XRD patterns, it was confirmed that the transmittance changes in TeS150TGeS150T thin film before and after annealing are due to crystalization. The transmittance changes in TeS150TGeS150T thin film with annealing are largest at diode laser wavelength and the trasmittance changes with laser exposure are decreased fast. |