Title |
A Novel Schottky Diode with the Self-Aligned Guard Ring |
Keywords |
쇼트키 다이오드 ; 가드 링 ; 반응성 이온 식각 ; 항복전압 Schottky diode ; guard ring ; RIE ; breakdown voltage |
Abstract |
Novel A1-Si Schottky diodes with self-aligned guard rings have been proposed and fabricated using RIE(Reactive Ion Etch). The breakdown voltage of the Schottky diode with the guard ring has been drastically increased to 200V or more in comparison with 46V for the metal overlap Schottky diode. |