| Title |
Characteristics of TiN/TiSi_2 Contact Barrier Layer by Rapid Thermal Anneal in N_2 Ambient |
| Keywords |
TiN/TiSi_2 system ; cometitive reaction ; TiN ; and ; TiSi_2 stoichiometry ; structure ; RTA in N_2 ambient |
| Abstract |
The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above 600°C. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at 600°C. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at 700°C. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 800°C. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased. |