| Title |
A Basic Study on X-ray Controlled Semiconductor Switch for Pulse Power |
| Authors |
Ko, Kwang-Cheol(Ko, Kwang-Cheol) |
| Keywords |
X선제어 반도체스위치 ; 벌크형 실리콘 ; 펄스파워 ; 스위칭 전류 X-ray Controlled Semiconductor Switch ; bulk Silicon ; Pulse Power ; Switching Current |
| Abstract |
The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole. |