| Title |
A Study on the Preparation and Resist Characterization of the Plasma Polymerized Thin Films |
| Authors |
이덕출 ; 박종관 ; 한상옥 ; 김종석 ; 조성욱 |
| Keywords |
플라즈마중합 MMA ; 플라즈마공중합 ; 내정전결합형 반응관 ; 가속전압 ; 자기현상 PPMMA ; PP(MMA-TMT) ; Interelectrode Capacitively coupled Reactor ; Acceleration Voltage ; Self-development |
| Abstract |
The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrode capacitively coupled gas-flow-type reactor, and chosen methylmethacrylate(MMA)and methylmethacrylate-tetrameth-yltin(MMA-TMT) as a monomer. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage of 30kV and an expose dose ranging from 20 to 900μC/cmS02T. The delineated pattern in the resist was developed with the same reactor which is used for polymerization using an argon as etching gas. The growth rate and etching rate of the thin film is increased with increasing of discharge power. Thin films by plasma polymerization show polymerization rate of 30~45( pm3) A/min, and etching rate of 440( pm30) A/min during Ar plasma etching at discharge power of 100W. In apparently lower than that of conventional PMMA, but the plasma-etching rate of PP(MMA-TMT) was higher than that of PPMMA. |