| Title |
The physical properties and switching characteristics of amorphous As-Ge-Te thin film |
| Keywords |
마이크로웨이브 소자 ; 메모리 스위칭 ; 특성이완시간 ; 결함준위밀도 ; 국재파동함수 Microwae Device ; Memory Switching ; Characteristic Relaxation Time ; Spatial Density of Defect States ; Localized Wavefunction |
| Abstract |
The switching characteristics of As_{10} Ge_{15} Te_{75} thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As_{10} Ge_{15} Te_{75} thin film ; a characteristic relaxation time (.tau._{0} ), the spatial density of defect states (N), and the localized wavefunction (.alpha.^{-1} ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature. |