| Title |
Investigation of Physical Properties of N-doped DLC Film and Its Application to Mo-tip FEA Devices |
| Authors |
주병권(Ju, Byeong-Kwon) ; 정재훈(Jung, Jae-Hoon) ; 김훈(Kim, Hoon) ; 이윤희(Lee, Yun-Hi) ; 이남양(Lee, Nam-Yang) ; 오명환(Oh, Myung-Hwan) |
| Keywords |
Field emission ; Mo-tip FEA ; DLC coating ; N-doping ; low-hydrogenated film ; transconductance ; electrical |
| Abstract |
N-doped and low-hydrogenated DLC thin films were coated on the Mo-tip FEAs in order to improve the field emission performance and their electrical properties were evaluated. The fabricated devices showed improved field emission performance in terms of turn-on voltage, emission current and current fluctuation. This result might be caused both by the shift of Fermi level toward conduction band by N-doping and by the inherent stability of DLC material. Furthermore, the transconductance of the DLC-coated Mo-tip FEA and electrical conductivity and optical band-gap of the deposited DLC films were investigated. |