| Title |
A Study on the Forward I-V Characteristics of the Separated Shorted-Anode Lateral Insulated Gate Bipolar Transistor |
| Authors |
변대석(Byeon, Dae-Seok) ; 전정훈(Chun, Jeong-Hun) ; 이병훈(Lee, Byeong-Hun) ; 김두영(Kim, Du-Yeong) ; 한민구(Han, Min-Ku) ; 최연익(Choi, Yeon-Ik) |
| Keywords |
Shorted-anode ; Insulated gate bipolar transistor (IGBT) ; Negative differential resistance |
| Abstract |
We investigate the device characteristics of the separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, by 2-dimensional numerical simulation. The SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The negative differential resistance regime of the SSA-LIGBT is significantly suppressed as compared with that of the conventional SA-LIGBT. The SSA-LIGBT shows the lower forward voltage drop than that of the conventional SA-LIGBT. |