| Title |
Study of the Device Characteristics of The Base Resistance Controlled Thyristor With The Self-Align Corrugated P-base |
| Authors |
이유상(Lee, Yu-Sang) ; 변대석(Byeon, Dae-Seok) ; 이병훈(Lee, Byeong-Hun) ; 김두영(Kim, Du-Yeong) ; 한민구(Han, Min-Gu) ; 최연익(Choe, Yeon-Ik) |
| Keywords |
base resistance controlled thyristor (BRT) ; latching current ; maximum controllable current |
| Abstract |
The device characteristics of the base resistance controlled thyristor with self-align corrugated p-base is demonstrated for the first time with varying the n+ cathode width and the temperature form room temperature to 125°C. The experimental results show that the snap-back in the CB-BRT is significantly suppressed irrespective of the various n+ cathode width and the temperature as compared with that of the conventional BRT. The maximum controllable current of the CB-BRT is uniformly higher when compared with that of the conventional BRT over the temperature range from room temperature to 125°C. |