| Title |
Analytic breakdown voltage as a function of temperature for GaAs p^+n junction |
| Keywords |
Temperature dependent ; Effective ionization coefficient ; Analytical expression ; Breakdown voltage ; Gallium Arsenide |
| Abstract |
Temperature dependence of effective ionization coefficients in GaAs is formulated as a single polynomial function of temperature, which allows analytical expressions for breakdown voltage of GaAs p^+n junctions as a function of temperature. At 300 K, extracted effective ionization coefficient of GaAs p^+n junction especially agrees well with the published result of <111> oriented GaAs. The analytic results agree with the simulation as well as the experimental ones reported within 10% in error for the doping concentrations in the range of 10_{14}cm_{-3}~10_{17}cm_{-3} at 100 K, 300 K and 500 K. |