| Title |
Etching of Silicon Wafer Using Focused Argon lon Laser Beam |
| Authors |
정재훈(Cheong, Jae-Hoon) ; 이천(Lee, Cheon) ; 박정호(Park, Jung-Ho) |
| Keywords |
레이저 유기 열화학 식각 ; 아르곤 이온 레이저 ; 식각율 ; 종횡비 ; 가우시안 분포 laser-induced thermochemical etching ; argon ion laser ; etch rate ; aspect ratio ; gaussian intensity distribution |
| Abstract |
Laser-induced thermochemical etching has been recognized as a new powerful method for processing a variety of materials, including metals, semiconductors, ceramics, insulators and polymers. This study presents characteristics of direct etching for Si substrate using focused argon ion laser beam in aqueous KOH and CCl_2F_2 gas. In order to determine process conditions, we first theoretically investigated the temperature characteristics induced by a CW laser beam with a gaussian intensity distribution on a silicon surface. Major process parameters are laser beam power, beam scan speed and reaction material. We have achieved a very high etch rate up to 434.7μm/sec and a high aspect ratio of about 6. Potential applications of this laser beam etching include prototyping of micro-structures of MEMS(micro electro mechanical systems), repair of devices, and isolation of opto-electric devices. |