| Title |
Characteristics of Polycrystalline Silicon TFT Unitary CMOS Circuits Fabricated with Various Technology |
| Authors |
유준석(Yu, Jun-Seok) ; 박철민(Park, Cheol-Min) ; 전재홍(Jeon, Jae-Hong) ; 한민구(Han, Min-Gu) |
| Keywords |
polycrystalline silicon ; thin film transistor ; peripheral driving circuits ; ELA ; SPC |
| Abstract |
This paper reports the characteristics of poly-Si TFT unitary CMOS circuits fabricated with various techniques, in order to investigate the optimum process conditions. The active films were deposited by PECVD and LPCVD using SiH_4 and Si_2H_6 as source gas, and annealed by SPC and ELA methods. The impurity doping of the oource and drain electrodes was performed by ion implantation and ion shower. In order to investigate the AC characteristics of the poly-Si TFTs processed with various methods, we have examined the current driving characteristics of the polt-Si TFT and the frequency characteristics of 23-stage CMOS ring oscillators. Ithas been observed that the circuits fabricated using Si_2H_6 with low-temperature process of ELA exhibit high switching speed and current driving performances, thus suitable for real application of large area electronics. |