| Title |
Deposition Ba_{1-x}Sr_xTiO_3Thin Films and Electrical Properties with Various Materials Top Electrodes |
| Authors |
박춘배(Park, Choon-Bae) ; 김덕규(Kim, Deok-Kyu) ; 전장배(Jeon, Jang-Bae) |
| Keywords |
Ba_{1-x}Sr_xTiO_3 sputtering ; top electrode ; interface ; capacitance ; evaporator ; leakage current |
| Abstract |
Ba_{1-x}Sr_xTiO_3 thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown Pt/TiN/SiO_2/Si subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on Ba_{1-x}Sr_xTiO_3 thin films as top electrodes by using a thermal evaporator. The electrical properties of Ba_{1-x}Sr_xTiO_3 thin films for various compositions were characterized and the physical properties at interface between Ba_{1-x}Sr_xTiO_3 thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes. Ba_{0.5}Sr_{0.5}TiO_3 thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of 5.26×10^{-6}A/cm2 at the forward bias of 2 V. |