| Title |
Fabrication and Operating Properties of Nb Silicide-coated Si-tip Field Emitter Arrays |
| Authors |
주병권(Ju, Byeong-Kwon) ; 박재석(Park, Jae-Seok) ; 이상조(Lee, Sangjo) ; 김훈(Kim, Hoon) ; 이윤희(Lee, Yun-Hi) ; 오명환(Oh, Myung-Hwan) |
| Keywords |
Si-tip field emitter ; Nb silicide ; field emission ; field emission display |
| Abstract |
Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by O_2 plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in N_2 ambient at 1100°C for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V. |