| Title |
A Lateral Dual-Channel Emitter Switched Thyristor with the Segmented p-Base |
| Authors |
오재근(O, Jae-Geun) ; 변대석(Byeon, Dae-Seok) ; 한민구(Han, Min-Gu) ; 최연익(Choe, Yeon-Ik) |
| Keywords |
snapback ; EST ; segmented p-base ; forward voltage drop |
| Abstract |
A new lateral device entitled SB-DCEST(segmented p-base dual-channel emitter switched thyristor), which suppresses the snapback is proposed and successfully fabricated. The proposed device effectively suppressed the snapback phenomenon by employing the gigh resistance in self-aligned segmented p-base when compared with the conventional DCEST. The experimental results show that the SB-DCEST has the low forward voltage drop of 4.3 V at anode current of 150 A/cm^2 with the eliminated snap-back regime, while conventional DCEST exhibits higher forward voltage drop of 5.3 V. |