Title |
The Forward Characteristics of A New Lateral Thyristor with Current Saturation |
Authors |
이유상(Lee, Yu-Sang) ; 최연익(Choe, Yeon-Ik) ; 한민구(Han, Min-Gu) |
Keywords |
A newly proposed lateral dual-gate thyristor ; excellent current saturation characteristics ; elimination of the structurally existing parasitic thyristor |
Abstract |
A newly proposed lateral dual-gate thyristor was fabricated and measured, which has excellent current saturation characteristics of 1200A/cm^2 even at an anode-gate voltage of 29V, through the elimination of the structurally existing parasitic thyristor. And through the comparison with the LIGBT, the excellent current saturation characteristics of a newly proposed device was verified. |