| Title |
Numerical Analyses on Snapback-Free Shorted-Anode SOI LIGBT by using a Floating Electrode and an Auxiliary Gate |
| Authors |
오재근(O, Jae-Geun) ; 김두영(Kim, Du-Yeong) ; 한민구(Han, Min-Gu) ; 최연익(Choe, Yeon-Ik) |
| Keywords |
dual-gate ; SA-LIGBT ; snapback ; floating electrode |
| Abstract |
A dual-gate SOI SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) which eliminates the snapback effectively is proposed and verified by numerical simulation. The elimination of the snapback in I-V characteristics is obtained by initiating the hole injection at low anode voltage by employing a dual gate and a floating electrode in the proposed device. For the proposed device, the snapback phenomenon is completely eliminate, while snapback of conventional SA-LIGBT occurs at anode voltage of 11 V. Also, the drive signals of two gates have same polarity by employing the floating electrode, thereby requiring no additional power supply. |