| Title |
A SOI Lateral Hybrid BMFET with High Current Gain |
| Authors |
김두영(Kim, Du-Yeong) ; 전정훈(Jeon, Jeong-Hun) ; 김성동(Kim, Seong-Dong) ; 한민구(Han, Min-Gu) ; 최연익(Choe, Yeon-Ik) |
| Keywords |
hybrid BMFET ; SOI ; bipolar-mode field effect transistor(BMFET) ; current gain ; barrier lowering |
| Abstract |
A hybrid SOI bipolar-mode field effect transistor (BMFET) is proposed to improve the current gain. The device characteristics are analyzed and verified numerically for BMFET mode, DMOS mode, and hybrid mode by MEDICI simulation. The proposed SOI BMFET exhibits 30 times larger current gain in hybrid-mode operation by connecting DMOS gate to the p+ gate of BMFET structure as compared with the conventional structure without sacrifice of breakdown voltage and leakage current characteristics. This is due to the DMOS-gate-induced hybrid effect that lowers the barrier of p-body and reduces the charge in p-body. |