| Title |
Dry Etching Characteristics of GaN using a Magnetized Inductively Coupled CH_4/H_2/Ar Plassma |
| Authors |
김문영(Kim, Mun-Yeong) ; 심종경(Sim, Jong-Gyeong) ; 태흥식(Tae, Heung-Sik) ; 이호준(Lee, Ho-Jun) ; 이용현(Lee, Yong-Hyeon) ; 이정희(Lee, Jeong-Hui) ; 백영식(Baek, Yeong-Sik) |
| Keywords |
a magnetized inductively coupled CH_4/H_2/Ar plasma ; ion current density ; GaN ; dry etching ; etch rate |
| Abstract |
This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled CH_4/H_2/Arplasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with CH_4/H_2/Ar chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field. |