| Title |
Fabrication and Characterization of Floating-Gate MOSFET with Multi-Gate and Channel Structures for CMOS Image Sensor Applications |
| Authors |
주병권(Ju, Byeong-Gwon) ; 신경식(Sin, Gyeong-Sik) ; 이영석(Lee, Yeong-Seok) ; 백경갑(Baek, Gyeong-Gap) ; 이윤희(Lee, Yun-Hui) ; 박정호(Park, Jeong-Ho) |
| Keywords |
CMOS ; Photo-transistor ; BJT ; MOSFET ; CCD |
| Abstract |
The floating-gate MOSFETs were fabricated by employing 1.5 m n-well CMOS process and their optical-electrical properties were characterized for the application to CMOS image sensor system. Based on the simulation of energy band diagram and operating mechanism of parasitic BJT were proposed as solutions for the increase of photo-current value. In order to realize them, MOSFETs having multi-gate and channel structures were fabricated and 60% increase in photo-current was achieved through enlargement of depletion layer and parallel connection of parasitic BJTs by channel division. |