| Title |
A Study on Electrical Properties of PZT Thin Films Deposited on the Glass Substrates |
| Authors |
정규원(Jeong, Kyu-Won) ; 주필연(Ju, Pil-Yeon) ; 박영(Park, Young) ; 이준신(Yi, Jun-Sin) ; 송준태(Song, Joon-Tae) |
| Keywords |
RTA ; RF magnetron sputtering ; PZT thin films ; hysteresis loop ; fatigue ; ITO ; Glass substrates |
| Abstract |
PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were Pγ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces. |