| Title |
The Etching Properties of SBT Thin Films in Cl_2 Inductively Coupled Plasma |
| Authors |
김동표(Kim, Dong-Pyo) ; 김창일(Kim, Chang-Il) |
| Abstract |
SBT thin films were etched at different content of Cl_2 in Cl_2/Ar or Cl_2/N_2(80%). As Cl_2 gas increased in Cl_2/Ar or Cl_2/N_2 gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or Cl_2 only plasma were higher than that of as-deposited, Cl_2/Ar and Cl_2/N_2 plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS. |