| Title |
Improvement of Geometrical Structure of Cr-Gate Electrode in Mo-tip Field Emitter Array |
| Authors |
주병권(Ju, Byeong-Kwon) ; 김훈(Kim, Hoon) ; 서상원(Seo, Sang-Won) ; 이윤희(Lee, Yun-Hi) |
| Keywords |
Chromium ; Mo-tip FEA ; Etched feature ; deposition condition |
| Abstract |
The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall. |