| Title |
Effect of TiB_2on Properties of SiC Electroconductive Ceramic Composites |
| Authors |
신용덕(Sin, Yong-Deok) ; 박미림(Park, Mi-Rim) ; 소병문(So, Byeong-Mun) ; 이동문(Lee, Dong-Mun) |
| Keywords |
Electroconductive Ceramic ; YAG ; Pressureless Annealing ; NTCR ; PTCR |
| Abstract |
The mechanical and electrical properties of the pressureless sintered SiC-TiB_2electroconductive ceramic composites were investigated as functions of the transition metal of TiB_2. The result of phase analysis for the SiC-TiB_2 composites by XRD revealed α-SiC(6H), TiB_2, and YAG(Al_{5}Y_3O_{12}) crystal phases. The relative density showed the lowest 84.8% for the SiC-TiB_2composites added with 39vol.%TiB_2. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 7.8 MPa.m^{1}2/ for composites added with 39vol.%TiB_2under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%TiB_2 composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%TiB_2composites was all positive temperature coefficient resistance(PCTR) in the temperature range of 25°C to 700°C.EX>. |