| Title |
Effects of Various Facility Factors on CMP Process Defects |
| Authors |
박성우(Park, Seong-U) ; 정소영(Jeong, So-Yeong) ; 박창준(Park, Chang-Jun) ; 이경진(Lee, Gyeong-Jin) ; 김기욱(Kim, Gi-Uk) ; 서용진(Seo, Yong-Jin) |
| Keywords |
CMP(chemical mechanical polishing) ; IMD(inter-metal dielectric) ; HSB(high spray bar) ; PN_2(Purified N_2) ; hot spot ; POU(point of use) ; DIW(deionized water) |
| Abstract |
Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified N_2 (PN_2) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and PN_2 gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process. |