| Title |
Optimization of Double Polishing Pad for STI-CMP Applications |
| Authors |
박성우(Park, Seong-U) ; 서용진(Seo, Yong-Jin) ; 김상용(Kim, Sang-Yong) |
| Keywords |
chemical mechanical polishing (CMP) ; shallow trench isolation (STI) ; polishing pad ; soft pad ; hard pad ; global planarization ; center-fast type ; edge-fast type |
| Abstract |
Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield. |