| Title |
Microstructural Characterization of MOCVD RuOx Thin Films and Effects of Annealing Gas Ambient |
| Authors |
김경원(Kim, Gyeong-Won) ; 김남수(Kim, Nam-Su) ; 최일상(Choe, Il-Sang) ; 김호정(Kim, Ho-Jeong) ; 박주철(Park, Ju-Cheol) |
| Keywords |
Ru ; liquid delivery ; MOCVD ; thin film ; electrode |
| Abstract |
RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C_{8} H_{13} O_2)_3 as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 250°C were annealed at 650°C for 1min with Ar, N_2 or N H_3 ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than N_2 and N H_3 gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru O_2 phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 μΩ-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in N_2 ambient. The N_2 gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e. |