Title |
Study on Q Improvement of CMOS Spiral Inductor Using Multi Metal Layer for Silicon Substrate |
Keywords |
Inductor ; Multi metal ; Quality factor, CMOS |
Abstract |
The multi layer spiral inductors, which enhance the quality factor Q of an inductor fabricated on the silicon substrate, has been designed using a TSMC CMOS 0.2sum 1-poly 5-metal layer technology. To investigate the performance of the designed inductors, a 2.5-dimensional field simulation tool(Momentum) is used. The simulation results show that the quality factor Q of the 5-metal inductor is improved 1.8 times over that of a convention31 spiral inductor at 2GHz for wireless LAN applications. |