| Title |
A Study on the Electrical Properties of Ta_2O_{5} Thin Films by Atomic Layer Deposition Method in MOS Structure |
| Authors |
이형석 ; 장진민 ; 임장권 ; 하만효 ; 김양수 ; 송정면 ; 문병무 |
| Keywords |
MOS 커패시터 ; 원자층 증착 방법 ; 주사 전자 현미경 ; X선 회절 Metal-Oxide-Semiconductor capacitor ; Atomic Layer Deposition Method ; Scanning Electron Microscopy ; X-Ray Diffraction |
| Abstract |
ln this work, we studied electrical characteristics and leakage current mechanism of Ta_2O_{5} MOS(Metal-Oxide-Semiconductor) devices. Ta_2O_{5} thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 °C. The structures of the Ta_2O_{5} thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of Ta_2O_{5} is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of Ta_2O_{5} thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456×10^{14} (Ω·cm at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K. |