| Title |
A Study of The Voltage Transfer Function Dependent On Input Conditions For An N-Input NAND Gate |
| Authors |
김인모(Kim In-Mo) ; 송상헌(Song Sang-Hun) ; 김수원(Kim Soo-Won) |
| Keywords |
NAND ; Voltage Transfer Function ; Logic Threshold Voltage ; Noise Margin |
| Abstract |
In this paper, we analytically examine the voltage transfer function dependent on input conditions for an N-Input NAND Gate. The logic threshold voltage, defined as a voltage at which the input and the output voltage become equal, changes as the input condition changes for a static NAND Gate. The logic threshold voltage has the highest value when all the N-inputs undergo transitions and it has the lowest value when only the last input connected to the last NMOS to ground, makes a transition. This logic threshold voltage difference increases as the number of inputs increases. Therefore, in order to provide a near symmetric voltage transfer function, a multistage N-Input Gate consisting of 2-Input Logic Gates is desirable over a conventional N-Input Gate. |