| Title |
Measurement of Impurities and Physical Properties at Semiconductive Shield of a Power Cable |
| Authors |
이경용(Lee Kyoung-Yong) ; 양종석(Yang Jong-Seok) ; 최용성(Choi Yong-Sung) ; 박대희(Park Dae-Hee) |
| Keywords |
Semiconductive Shield ; Ionic Impurities ; Density ; Specific Heat |
| Abstract |
In this paper, we investigated ionic impurities and physical properties by change of carbon black content, which is asemiconductive material for underground power transmission. Specimens were made into sheet form with three existing resins and nine specimens for measurement. The ionic impurities of the specimens were measured using anICP-AES (Inductively Coupled Plasma Atomic Emission Spectrometer), and the density of specimens was measured by a density meter. Specific heat (Cp) was then measured using aDSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from 0[°C] to 200[°C], and heating temperature was 4[°C/min]. Ionic impurities were measured to be high according to increases in the content of carbon black from this experimental result and density was also increased according to these properties. In particular, the impurity content values of A1 and A2, and existing resins, were measured at more than 4000[ppm]. Specific heat from the DSC results was lowered according to augmentation in the content of carbon black. The ionic impurities of carbon black containing Fe, Co, Mn, Al and Zn are forms of rapidly passed kinetic energy that increase the number of times breaking occurs during unit time with the near particles according to an increase in the vibration of particles by the applied heat energy. |