| Title |
Effects of Post-Annealing Treatment of ZnO Thin Films by Pulsed Laser |
| Authors |
이천(Lee Cheon) ; 김재홍(Kim Jae-Hong) |
| Keywords |
Pulsed Laser Deposition(PLD) ; ZnO ; post-annealing treatment |
| Abstract |
ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of 300 ~450°C and oxygen gas flow rate of 100 ~700 sccm. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL). |