| Title |
Properties wRh Ca Substitutional Contents of SrTiO_{3} Ceramic Thin Film |
| Authors |
김진사(Kim Jin-Sa) ; 오용철(Oh Yong-Cheol) ; 조춘남(Cho Choon-Nam) ; 신철기(Shin Cheol-Gi) ; 송민종(Song Min-Jong) ; 최운식(Choi Woon-Shik) ; 박민순(Park Min-Sun) ; 김충혁(Kim Chung-Hyeok) |
| Keywords |
Substitutional Contents ; Deposition Rate ; Dielectric Constant ; Dielectric Relaxation |
| Abstract |
The (Sr_{1-x}Ca_x)TiO_3(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/SiO_{2}Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O_{2} ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about 18.75{ AA}/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol %]. The capacitance characteristics had a stable value within pm4[ %] in temperature ranges of -80 ~+90[°C]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. |