| Title |
Volume Resistivity, Specific Heat and Thermal Conductivity Measurement of Semiconducting Materials for 154[kV] |
| Authors |
이경용(Lee, Kvoung-Yong) ; 양종석(Yang, Jong-Seok) ; 최용성(Choi, Yong-Sung) ; 박대희(Park, Dae-Hee) |
| Keywords |
Semiconductive Materials ; Volume Resistivity ; Specific Heat ; Thermal Conductivity |
| Abstract |
We have investigated volume resistivity and thermal properties showed by changing the content of carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both 25 pm1[°C] and 90 pm1[°C]. And specific heat (Cp) and thermal conductivity were measured by Nano Flash Diffusivity and DSC (Differential Scanning Calorimetry). The measurement temperature ranges of specific heat using the BSC was from 20[°C] to 60[°C], and the heating rate was 1[°C/min]. And the measurement temperatures of thermal conductivity using Nano Flash Diffusivity were both 25[°C] and 55[°C]. Volume resistivity was high according to an increment of the content of carbon black from these experimental results. And specific heat was decreased, while thermal conductivity was increased by an increment of the content of carbon black. And both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature. |