| Title |
The Characteristics of Chalcogenide Ge_1Se_1Te_2 Thin Film for Nonvolatile Phase Change Memory Device |
| Authors |
이재민(Lee, Jae-Min) ; 정홍배(Chung, Hong-Bay) |
| Keywords |
Phase Change Memory(PCM) Device ; Non-Volatile Memory ; Chalcogenide ; Ge-Se-Te |
| Abstract |
In the present work, we investigate the characteristics of new composition material, chalcogenide Ge_1Se_1Te_2 material in order to overcome the problems of conventional PRAM devices. The Tc of Ge_1Se_1Te_2 bulk was measured 231.503°C with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous Ge_1Se_1Te_2 showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is 80 sim100{Ω}. Reset pulse has 8.6 V 80 ns, then the sample resistance is 50~100K{Ω}. For such high resistance ratio of R_{reset}/R_{set}, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of Ge_1Se_1Te_2 materials are closely related with the structure through the experiment of self-heating layers. |