| Title |
2- Dimensional Embossing Type Hologram Fabrication in Amorphous As-Ge-Se-S with the Selective Etching |
| Authors |
이기남(Lee, Ki-Nam) ; 정홍배(Chung, Hong-Bay) |
| Keywords |
As-Ge-Se-S 박막 ; 2차원 홀로그램 ; 엠보싱 ; 선택적 에칭 NaOH |
| Abstract |
In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were 2.5 AA/s, 3.3 AA/s, 3.9 AA/s where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the 90° degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully. |