| Title |
Electrical and Mechanical Properties of Semiconducting Shield for Power Cable by Carbon Nanotube Content |
| Authors |
양종석(Yang Jong-Seok) ; 이경용(Lee Kyoung-Yang) ; 신동훈(Shin Dong-Hoon) ; 박대희(Park Dae-Hee) |
| Keywords |
Semiconducting Materials ; CNT ; EEA ; Volume Resistivity ; Stress-Strain |
| Abstract |
In this study, we have investigated electrical and mechanical properties of semiconducting materials for power cable caused by CNT. Specimens were made of sheet form with the four of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both 23pm 1 [°C] and 90pm 1 [°C]. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/Cm2] and 600[%]. From this experimental results, the volume resistivity had different properties because of PTC/NTC tendency at between 23[°C] and 90[°C]. Also volume resistivity was low by increasing the content of CNT. It means that a small amount of CNT has a excellent electrical properties. And stress was increased, while strain was decreased by increasing the content of CNT. Thus, we could know that a small amount of CNT has a excellent electrical and mechanical oroperties. |