| Title |
Microstructure and Structural Properties of SCT Thin Film |
| Authors |
김진사(Kim, Jin-Sa) ; 오용철(Oh, Yong-Cheol) |
| Keywords |
Thin Film ; Annealing ; Deposition Temperature ; Dielectric Constant |
| Abstract |
The (Sr_{0.85}Ca_{0.15})TiO_3(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/SiO_2/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[°C]. The optimum conditions of RF power and Ar/O_2 ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[{ AA}/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at 600°C. |