| Title |
Development on the High Concentration Ozone Generator System for the Semiconductor Photoresist Strip Process |
| Authors |
손영수(Son, Young-Su) ; 함상용(Ham, Sang-Yong) |
| Keywords |
오존 증기 ; 오존발생장치 ; 감광막 제거 ; 연면방전 ; 수 전극 ; |
| Abstract |
we have been developed on the ultra high concentration ozone generator system which is the core technology in the realization of the semiconductor photoresist strip process using the ozone-vapor chemistry. The proposed ozone generator system has the structure of the surface discharge type which adopt the high purity ceramic dielectric tube. We investigate the performance of the proposed ozone generator system experimentally and the results show that the system has very high ozone concentration characteristics of 19.7[wt%/O_2] at the flow rate of 0.3[l/min] of each discharge cell. As a result of the silicon wafer photoresist strip test, we obtained the strip rate of about 400[nm/min] at the ozone concentration of 16[wt%/O_2] and flow rate of 8[l/min]. So, we confirmed that it's possible to use the proposed high concentration ozone generator system for the ozone-vapor photoresist strip process in the semiconductor and FPD industry. |