| Title |
The Research of FN Stress Property Degradation According to S-RCAT Structure |
| Authors |
이동인(Lee, Dong-In) ; 이성영(Lee, Sung-Young) ; 노용한(Roh, Yong-Han) |
| Keywords |
DRAM ; S-RCAT ; FN STRESS ; Degradation ; Dual Poly Gate ; Oxidation |
| Abstract |
We have demonstrated the experimental results to obtain the immunity of FN (Fowler Nordheim) stress for S-RCAT (Spherical-Recess Cell Array Transistor) which has been employed to meet the requirements of data retention time and propagation delay time for sub-100-nm mobile DRAM (Dynamic Random Access Memory). Despite of the same S-RCAT structure, the immunity of FN stress of S-RCAT depends on the process condition of gate oxidation. The S-RCAT using DPN (decoupled plasma nitridation) process showed the different degradation of device properties after FN stress. This paper gives the mechanism of FN-stress degradation of S-RCAT and introduces the improved process to suppress the FN-stress degradation of mobile DRAM. |