| Title |
Process Optimization Approached by Design of Experiment Method for Ga-doped ZnO Thin Films |
| Authors |
이득희(Lee, Deuk-Hee) ; 김상식(Kim, Sang-Sig) ; 이상렬(Lee, Sang-Yeol) |
| Keywords |
DOE ; Ga-doped ; ZnO ; PLD ; TCO |
| Abstract |
Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about 1.8'10^{-4}Wcm which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %. |