| Title |
Electrical Properties with Annealing Temperature of SBN Thin Film |
| Keywords |
Sputtering ; Rougness ; Dielectric loss ; Fatigue |
| Abstract |
The Sr_{0.7}Bi_{2.3}Nb_2O_9 thin films were deposited on Si substrate using RF magnetron sputtering method. And the SBN thin films were annealed at 650~800[°C]. The surface rougness showed about 0.42[nm] in annealed thin film at 650[°C]. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 700[°C]. The voltage dependence of dielectric loss showed a value within 0.02 in voltage ranges of -10~＋10[V]. The dielectric constant characteristics showed a stable value with the increase of frequency. Also, the SBN thin films annealed at 750[°C] showed a fatigue-free characteristics up to 1.0×10^8 cycles. |