| Title |
Properties of HfO2 Insulating Film Using the ALD Method for Nonvolatile Memory Application |
| Authors |
정순원(Jung, Soon-Won) ; 구경완(Koo, Kyung-Wan) |
| Keywords |
Atomic layer deposition ; HfO_2 ; Metal-insulator-semiconductor ; Nonvolatile memory |
| Abstract |
We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with HfO_2/p-Si structures. The HfO_2 film was grown at 200°C on H-terminated Si wafer by atomic layer deposition (ALD) system. TEMAHf and H_2O were used as the hafnium and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TEMAHf pulse, 10 s of N_2 purge, 0.1 s of H_2O pulse, and 60 s of N_2 purge. The 5 nm thick HfO_2 layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si. |