| Title |
Modeling and Simulation for Transient Pulse Gamma-ray Effects on Semiconductor Devices |
| Authors |
이남호(Lee, Nam-Ho) ; 이승민(Lee, Seung-Min) |
| Keywords |
Nuclear weapon ; Transient radiation effect ; Prompt gamma-ray ; Logic gate device |
| Abstract |
The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed. |