| Title |
Fabrication and Electrical Properities of Semiconducting YBa2Cu3O7-x thin Film or Application of IR Sensors |
| Authors |
정재운(Jeong, Jae-Woon) ; 조서현(Jo, Seo-Hyeon) ; 이성갑(Lee, Sung-Gap) |
| DOI |
https://doi.org/10.5370/KIEE.2012.61.9.1296 |
| Keywords |
YBCO ; Bolometer ; Thin film ; TCR |
| Abstract |
YBa_2Cu_3O_{7-x} thin films were fabricated by the spin-coating method on SiO_2/Si substrate using an alkoxide-based sol-gel method. The structural and electrical properties were investigated for various 1st annealing temperature. Due to the formation of the polycrystalline single phase, synthesis temperature was observed at around 720°C-800°C. YBa_2Cu_3O_{7-x} thin films with the 1st annealing temperature of 450°C~500°C showed the single XRD patterns without the second phase, such as YBa_2Cu_4O_8. The thickness of films was approximately 0.23μm~0.27μm. Aerage grain size, resistance and temperature coefficient of resistance (TCR) of YBa_2Cu_3O_{7-x} thin films with the 1st annealing temperature of 500°C were 0.27μm, 59.7M{Ω} and -3.7 %/K, respecvitely. |