| Title |
Ionizing Radiation Sensitivity Analysis of the Structural Characteristic for the MOS Capacitors |
| Authors |
황영관(Hwang, Young-Gwan) ; 이승민(Lee, Seung-Min) |
| DOI |
https://doi.org/10.5370/KIEE.2013.62.7.963 |
| Keywords |
MOS capacitor ; Ionizing radiation effect ; PIN diode |
| Abstract |
Ionizing Radiation effects on MOS devices provide useful information regarding the behavior of MOS based devices and circuits in the electronic instrumentation parts and instructive data for making the high sensitive sensors. The study presents the results of the analysis on the structural characteristics of MOS capacitor for sensing the ionizing radiation effect. We performed numerical modeling of Ionizing-radiation effect on MOS capacitor and simulation using Matlab program. Also we produced MOS capacitors and obtained useful data through radiation experiment to analyse the characteristic of ionizing radiation effect on MOS capacitor. Increasing the thickness of MOS capacitor's oxide layer enhanced the sensitivity of MOS capacitor under irradiation condition, but the sensitivity of irradiated MOS capacitor is uninfluenced by the area of MOS capacitor. The high frequency capacitance of the MOS capacitor is found to be strongly affected by incident ionizing radiation. |