| Title |
A Review: Comparison of Fabrication and Characteristics of Flexible ReRAM and Multi-Insulating Graphene Oxide Layer ReRAM |
| Authors |
김동균(Kim, Dong-Kyun) ; 김태헌(Kim, Taeheon) ; 윤태환(Yoon, Taehwan) ; 박정호(Pak, James Jungho) |
| DOI |
https://doi.org/10.5370/KIEE.2016.65.8.1369 |
| Keywords |
ReRAM ; Graphene oxide ; MIM ; SET ; RESET |
| Abstract |
A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices. |